On the doping efficiency of nitrogen in hydrogenated amorphous germanium

Nitrogen modification of hydrogenated amorphous carbon films

The effect of nitrogen addition on the structural and electronic properties of hydrogenated amorphous carbon ~a-C:H! films has been characterized in terms of its composition, sp bonding fraction, infrared and Raman spectra, optical band gap, conductivity, and paramagnetic defect. The variation of conductivity with nitrogen content suggests that N acts as a weak donor, with the conductivity firs...

Light-induced electron spin resonance in amorphous hydrogenated germanium

We report the observation of light-induced electron spin resonance ~LESR! in amorphous hydrogenated germanium. Two new lines with zero crossings near g52.01 and g52.03 were detected and ascribed to electrons and holes in the conductionand valence-band-tail states, respectively. The ratio between the LESR spin densities of both lines is approximately one, suggesting the absence of spin pairing, ...

Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

Theoretical Studies of Structure and Doping of Hydrogenated Amorphous Silicon

In a-Si:H, large concentrations of B or P (of order 1%) are required to dope the material, suggesting that doping mechanisms are very different than for the crystal for which much smaller concentrations are required. In this paper, we report simulations on B and P introduced into realistic models of a-Si:H and a-Si, with concentrations ranging from 1.6% to 12.5% of B or P in the amorphous host....

Nitrogen doping of amorphous carbon thin films

Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...